Physical and electrical characterization of ALCVD™ TiN and WNxCy used as a copper diffusion barrier in dual damascene backend structures (08.2)-Reference-Cited by-同舟云学术

Physical and electrical characterization of ALCVD™ TiN and WNxCy used as a copper diffusion barrier in dual damascene backend structures (08.2)

Published:2002-10 Issue:1-4 Volume:64 Page:247-253
ISSN:0167-9317
Container-title:Microelectronic Engineering
language:en
Short-container-title:Microelectronic Engineering

Author:

Smith Steven,Li Wei-Min,Elers Kai-Erik,Pfeifer Klaus

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference7 articles.

1. Semiconductor Industry Association, International Technology Roadmap for Semiconductors: 2001 Edition. Austin TX:SEMATECH, 2001.

2. AVS Atomic Layer Deposition (ALD2001) proceedings, 2001.

3. Quick Reference Manual for Silicon Integrated Circuit Technology,1985

4. J.S. Pan et al., Mat. Res. Soc. Proc. Vol. 612, 2000 Materials Research Society, D9.18.1.

5. K. Kershen, Adhesion Measurements, Multi-level Metals PAG, International Sematech, Austin, TX, 2000.

Cited by 29 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Blistering mechanisms of atomic-layer-deposited AlN and Al2O3films;Applied Physics Letters;2017-10-02

2. The annealing effect on work function variation of WN x C y films deposited by remote plasma atomic layer deposition;physica status solidi (a);2017-04-24

3. Characteristics of WNxCy films deposited using remote plasma atomic layer deposition with (MeCp)W(CO)2(NO) for Cu diffusion barrier;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2015-09

4. TEM Characterization of Nanocomposite Materials;Transmission Electron Microscopy Characterization of Nanomaterials;2013-11-18

5. Back End of the Line;Atomic Layer Deposition for Semiconductors;2013-10-19