The annealing effect on work function variation of WN x C y films deposited by remote plasma atomic layer deposition-Reference-Cited by-同舟云学术

The annealing effect on work function variation of WN x C y films deposited by remote plasma atomic layer deposition

Published:2017-04-24 Issue:7 Volume:214 Page:1700010
ISSN:1862-6300
Container-title:physica status solidi (a)
language:en
Short-container-title:Phys. Status Solidi A

Author:

Kim Hyunjung¹,Jang Woochool²,Shin Changhee¹,Lee Kunyoung²,Lim Heewoo¹,Kim Manseok¹,Yuh Junhan³,Jeon Hyeongtag¹²

Affiliation:

1. Department of Nano‐Scale Semiconductor EngineeringHanyang UniversitySeoul 133‐791South Korea

2. Division of Materials Science and EngineeringHanyang UniversitySeoul 133‐791South Korea

3. Division of Steel SolutionPOSCOSeoul 135‐777South Korea

Funder

National Research Foundation of Korea

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssa.201700010

Reference14 articles.

1. Contributions to the effective work function of platinum on hafnium dioxide

2. Metal Gate Electrode for Advanced CMOS Application

3. Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices

4. Work function tuning of plasma-enhanced atomic layer deposited WCxNyelectrodes for metal/oxide/semiconductor devices

5. Grain-Orientation Induced Work Function Variation in Nanoscale Metal-Gate Transistors—Part II: Implications for Process, Device, and Circuit Design

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