1. Self-heating analysis of GaN-HEMT for various ambient temperature and substrate thickness;Arivazhagan,2020
2. Innovative submicron thermal characterization method for AlGaN/GaN power HEMTs with hyperspectral thermoreflectance imaging;Brocero,2017
3. GaN-on-diamond HEMT technology with TAVG = 176°C at PDC,max = 56 W/mm measured by transient thermoreflectance imaging;Tadjer;IEEE Electron Device Lett.,2019
4. Semiconductor Devices Having Gallium Nitride Epilayers on Diamond Substrates;Francis,2005
5. First GaN-on-diamond transistor announced by Group4 Labs, Emcore, and AFRL,2006