Enhanced etching of GaN with N <sub>2</sub> gas addition during CVD diamond growth-Reference-Cited by-同舟云学术

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Enhanced etching of GaN with N ₂ gas addition during CVD diamond growth

Published:2024-08-16 Issue:1 Volume:4 Page:
ISSN:2694-1112
Container-title:Functional Diamond
language:en
Short-container-title:Functional Diamond

Author:

Mallik Awadesh Kumar¹²^ORCID,Krishnamurthy Giridharan¹²,Shih Wen-Ching¹³,Pobedinskas Paulius¹²,D’Haen Jan¹²,Haenen Ken¹²^ORCID

Affiliation:

1. Institute for Materials Research (IMO), Hasselt University, Diepenbeek, Belgium

2. IMEC vzw, IMOMEC, Diepenbeek, Belgium

3. Department of Electrical Engineering, Tatung University, Taipei, Taiwan

Funder

Methusalem NANO network and the Research Foundation – Flanders

AKM acknowledges FWO for his Postdoctoral Fellowship

Publisher

Informa UK Limited

Link

https://www.tandfonline.com/doi/pdf/10.1080/26941112.2024.2393817

Reference43 articles.

1. Stability, Reliability, and Robustness of GaN Power Devices: A Review

2. Materials and processing issues in vertical GaN power electronics

3. Lee WS et al. 2019 IEEE MTT-S international microwave symposium (IMS) A GaN/Diamond HEMTs with 23 W/mm for Next Generation High Power RF Application. Boston MA USA; 2019. p. 1395–1398. https://doi.org/10.1109/MWSYM.2019.8700882.

4. Thermal stress modelling of diamond on GaN/III-Nitride membranes

5. Thermal Modeling of GaN HEMT Devices With Diamond Heat-Spreader

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