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Electron-beam processes

Published:1980 Issue: Volume: Page:59-140
ISSN:
Container-title:Electron-Beam Technology in Microelectronic Fabrication
language:
Short-container-title:

Author:

GREENEICH JAMES S.

Publisher

Elsevier

Reference87 articles.

1. Range and straggle of boron in photoresist

2. Electron‐beam fabrication of chromium master masks

3. Bernacki, S. E., and Smith, H. I. (1974). In Int. Conf. Electron Ion Beam Sci. Technol., 6th (R. Bakish, ed.). Electrochemical Society, Princeton New Jersey.

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Monte Carlo modelling of electron beam lithography: a scaling law;Microsystem Technologies;1994-10

2. Sub-10nm Electron Beam Lithography: -AIF3-Doped Lithium Fluoride as a Resist;NANOLITHOGRAPHY: A Borderland between STM, EB, IB, and X-Ray Lithographies;1994

3. Effect of time-dependent development process on the limit of proximity exposure compensation in electron beam lithography;Microelectronics Reliability;1991-01

4. Modeling of electron beam scattering in high resolution lithography for the fabrication of X-Ray masks;European Transactions on Telecommunications;1990-03

5. Lithography Systems for VLSI;Large Scale Integrated Circuits Technology: State of the Art and Prospects;1982

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