Effect of time-dependent development process on the limit of proximity exposure compensation in electron beam lithography-Reference-Cited by-同舟云学术

Effect of time-dependent development process on the limit of proximity exposure compensation in electron beam lithography

Published:1991-01 Issue:6 Volume:31 Page:1091-1096
ISSN:0026-2714
Container-title:Microelectronics Reliability
language:en
Short-container-title:Microelectronics Reliability

Author:

Deshmukh P.R.,Khokle W.S.

Publisher

Elsevier BV

Subject

Electrical and Electronic Engineering,Surfaces, Coatings and Films,Safety, Risk, Reliability and Quality,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference19 articles.

1. Time evaluation of developed contours in poly(methyl methacrylate) electron resist;Greeneich;J. appl. Phys.,1974

2. Fundamental aspects of electron beam exposure of polymeric resist system;Hatzakis,1974

3. Electron beam resist edge profile simulation;Neureuther;IEEE Trans. Electron. Dev.,1979

4. A general simulator of VLSI lithography and etching processes: Part I. Application to projection lithography;Oldham;IEEE Trans. Electron. Dev.,1979

5. On proximity exposure compensation in electron beam lithography;Deshmukh;IEEE Trans. Electron. Dev.,1989

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1. Proximity exposure effect analysis using the phenomenon of resist debris formation in electron beam lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2002

2. Resist debris formation and proximity exposure effect in electron beam lithography;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

3. Electron-beam direct writing using RD2000N for fabrication of nanodevices;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2000

4. Resist debris formation in electron beam lithography;Vacuum;1999-04

5. Phenomenon of resist debris formation in electron beam lithography and its possible application;Vacuum;1996-11