Impact of Submicron Technology on Microwave and Millimeter-Wave Devices† †Research partially sponsored by the Air Force Office of Scientific Research, Air Force Systems Command, USAF, under Grant No. AFOSR-76-2939. The United States government is authorized to reproduce and distribute reprints for governmental purposes notwithstanding any copyright notation hereon.-Reference-Cited by-同舟云学术

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Impact of Submicron Technology on Microwave and Millimeter-Wave Devices† †Research partially sponsored by the Air Force Office of Scientific Research, Air Force Systems Command, USAF, under Grant No. AFOSR-76-2939. The United States government is authorized to reproduce and distribute reprints for governmental purposes notwithstanding any copyright notation hereon.

Published:1981 Issue: Volume: Page:105-147
ISSN:0736-7031
Container-title:VLSI Electronics Microstructure Science
language:
Short-container-title:

Author:

BLAKEY P.A.,EAST J.R.,HADDAD G.I.

Publisher

Elsevier

Reference129 articles.

1. Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’

2. “Ion Implantation of Semiconductors.”;Carter,1976

3. Issues in fabricating electron devices with submicrometer dimensions

4. High field transport in semiconductors;Conwell;Solid State Phys. Suppl.,1967

5. Calculation of hot electron phenomena

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