Solid state: Molecular beam epitaxy: Streams of molecules in a vacuum chamber build devices ‘from the atom up’
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx5/6/6330276/06330288.pdf?arnumber=6330288
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. GaAs Technology;GaAs Devices and Circuits;1987
2. Infrared laser action on the spatial, velocity, and cluster-size distributions in an SF6 free jet;Chemical Physics;1984-03
3. Physical limitations on miniaturization in microelectronics;Uspekhi Fizicheskih Nauk;1984
4. Determination of the InAs–GaAs(100) heterojunction band discontinuities by x‐ray photoelectron spectroscopy (XPS);Journal of Vacuum Science and Technology;1982-03
5. Protection of molecular beam epitaxy grown AlxGa1−xAs epilayers during ambient transfer;Journal of Vacuum Science and Technology;1981-07
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