Compositional analysis based on electron holography and a chemically sensitive reflection
Author:
Publisher
Elsevier BV
Subject
Instrumentation,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference33 articles.
1. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures
2. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells
3. Structural and chemical investigation ofIn0.6Ga0.4AsStranski-Krastanow layers buried in GaAs by transmission electron microscopy
4. Photoluminescence determinations of Cd diffusion in ZnSe
5. High resolution transmission electron microscopy determination of Cd diffusion in single quantum well structures
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1. Measurement of Diffusion and Segregation in Semiconductor Quantum Dots and Quantum Wells by Transmission Electron Microscopy: A Guide;Nanomaterials;2019-06-08
2. High resolution boron content profilometry at δ-doping epitaxial diamond interfaces by CTEM;Applied Surface Science;2018-12
3. Spatially resolved In and As distributions in InGaAs/GaP and InGaAs/GaAs quantum dot systems;Nanotechnology;2014-10-30
4. Investigation of diffusion in AlAs/GaAs distributed Bragg reflectors using HAADF STEM imaging;Journal of Physics: Conference Series;2011-11-09
5. Electron tomography of III-V quantum dots using dark field 002 imaging conditions;Journal of Microscopy;2010-02
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