Electron tomography of III-V quantum dots using dark field 002 imaging conditions

Author:

BEANLAND R.,SÁNCHEZ A.M.,HERNANDEZ-GARRIDO J.C.,WOLF D.,MIDGLEY P.A.

Publisher

Wiley

Subject

Histology,Pathology and Forensic Medicine

Reference50 articles.

1. Tuning and understanding the emission characteristics of MOVPE-grown self-assembled InAs/InP quantum dots;Bansal;J. Cryst. Growth,2007

2. Rapid cross-section TEM specimen preparation of III-V materials;Beanland;Microsc. Today,2003

3. Dark field transmission electron microscope images of III-V quantum dot structures;Beanland;Ultramicroscopy,2005

4. Composition determination in the GaAs/(Al,Ga)As system using contrast in dark field transmission electron microscope images;Bithell;Philos. Mag. A-Phys. Condens. Matter Struct. Defect Mech. Prop.,1989

5. III-V ternary semiconductor heterostructures: the choice of an appropriate compositional analysis technique;Bithell;J. Appl. Phys.,1991

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