Author:
Li Jiakai,Dehzangi Arash,Razeghi Manijeh
Funder
National Aeronautics and Space Administration
Defense Advanced Research Projects Agency
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference26 articles.
1. M. Razeghi, “9 - InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging,” in Mid-infrared Optoelectronics, E. Tournié and L. Cerutti Eds.: Woodhead Publishing, 2020, pp. 379-413.
2. Sb-based third generation at Center for Quantum Devices (SPIE Defense + Commercial Sensing);Razeghi,2020
3. High speed short wavelength infrared heterojunction phototransistors based on type II superlattices (SPIE OPTO);Li,2020
4. A. Dehzangi, R. McClintock, D. H. Wu, A. Haddadi, R. Chevallier, and M. Razeghi, “Extended short wavelength infrared heterojunction phototransistors based on type II superlattices,” (in English), Appl Phys Lett, vol. 114, no. 19, May 13 2019. [Online]. Available: ://WOS:000470152800023.
5. High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1−xSbx superlattices;Haddadi;Appl. Phys. Lett.,2015
Cited by
5 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献