InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging-Reference-Cited by-同舟云学术

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InAs/GaSb type II superlattices: A developing material system for third generation of IR imaging

Published:2020 Issue: Volume: Page:379-413
ISSN:
Container-title:Mid-infrared Optoelectronics
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Author:

Razeghi Manijeh

Publisher

Elsevier

Reference66 articles.

1. A new semiconductor superlattice;Sai-Halasz;Appl. Phys. Lett.,1977

2. M. Razeghi, Focal Plane Arrays in Type-II Superlattices, US Patent 6864552, 2005.

3. Interface-induced suppression of the Auger recombination in Type-II InAs/GaSb superlattices;Mohseni;Phys. Rev. B,1998

4. Type-II M structure photodiodes: an alternative material design for mid-wave to long wavelength infrared regimes;Nguyen,2007

5. Demonstration of shortwavelength infrared photodiodes based on Type-II InAs/GaSb/AlSb superlattices;Hoang;Appl. Phys. Lett.,2012

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4. Assessing Sb Cross Incorporation in InAs/InAsSb Superlattices;Journal of Electronic Materials;2022-09-29

5. Mid-wave infrared p+-B-n InAs/InAsSb type-II superlattice photodetector with an AlAsSb/InAsSb superlattice barrier;Infrared Physics & Technology;2022-03

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