High-performance short-wavelength infrared photodetectors based on type-II InAs/InAs1-xSbx/AlAs1−xSbx superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4932518
Reference17 articles.
1. Growth and Characterization of Long-Wavelength Infrared Type-II Superlattice Photodiodes on a 3-in GaSb Wafer
2. Mechanism of suppression of Auger recombination processes in type‐II heterostructures
3. Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes
4. High quality type II InAs/GaSb superlattices with cutoff wavelength ∼3.7 μm using interface engineering
5. Type II InAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
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1. Low dark current Sb-based short-wavelength infrared photodetector;AIP Advances;2024-09-01
2. Optical Characterization of the Interband Cascade LWIR Detectors with Type-II InAs/InAsSb Superlattice Absorber;Nanomaterials;2024-08-26
3. Comparison of type II superlattice InAs/InAsSb barrier detectors operating in the mid-wave infrared range;Journal of Applied Physics;2024-07-01
4. High performance type-II InAs/GaSb superlattice infrared photodetectors with a short cut-off wavelength;Opto-Electronics Review;2024-01-03
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