A theoretical and experimental study of the energy bandgap in MBE-grown Hg1-Cd Se-Reference-Cited by-同舟云学术

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A theoretical and experimental study of the energy bandgap in MBE-grown Hg1-Cd Se

Published:2020-12 Issue: Volume:111 Page:103522
ISSN:1350-4495
Container-title:Infrared Physics & Technology
language:en
Short-container-title:Infrared Physics & Technology

Author:

Pan Wenwu,Zhang Zekai,Liu Junliang,Lei Wen,Faraone Lorenzo

Funder

Australian Research Council

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference47 articles.

1. A review on MBE-grown HgCdSe infrared materials on GaSb (211) B substrates;Zhang;Chin. Phys. B,2019

2. Study of HgCdSe material grown by molecular beam epitaxy;Brill;J. Electron. Mater.,2011

3. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors;Lei;Appl. Phys. Rev.,2015

4. Third-generation infrared photodetector arrays;Rogalski;J. Appl. Phys.,2009

5. Molecular beam epitaxy growth of HgCdTe on large-area Si and CdZnTe substrates;Reddy;J. Electron. Mater.,2011

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