A review on MBE-grown HgCdSe infrared materials on GaSb (211)B substrates
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/1674-1056/28/1/018103/pdf
Reference27 articles.
1. Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
2. GaSb: A New Alternative Substrate for Epitaxial Growth of HgCdTe
3. Low dislocation density MBE process for CdTe-on-GaSb as an alternative substrate for HgCdTe growth
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1. Determination of elasto-plastic properties of semiconducting Hg1-xCdxSe using nanoindentation;Infrared Physics & Technology;2024-01
2. Nanoindentation of Hg0.7Cd0.3Se prepared by molecular beam epitaxy;Infrared Physics & Technology;2022-12
3. A theoretical and experimental study of the energy bandgap in MBE-grown Hg1-Cd Se;Infrared Physics & Technology;2020-12
4. Electronic structures and optical properties of Fe, Co, and Ni doped GaSb;Acta Physica Sinica;2019
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