Depth profile of acceptor concentration in InGaN/GaN multiple quantum wells

Author:

Hájek F.,Hospodková A.,Hubáček T.,Oswald J.,Pangrác J.,Dominec F.,Horešovský R.,Kuldová K.

Funder

Ministry of Education Youth and Sports of the Czech Republic

Technologická agentura České republiky

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference16 articles.

1. Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode;Ajia;ACS Photonics,2017

2. Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency;Haller;Appl. Phys. Lett.,2017

3. Room temperature PL efficiency of InGaN/GaN quantum well structures with prelayers as a function of number of quantum wells;Christian;Phys. Status Solidi,2016

4. Blue luminescence and Zn acceptor in GaN;Demchenko;Phys. Rev. B,2013

5. Luminescence properties of defects in GaN;Reshchikov;J. Appl. Phys.,2005

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