Dynamics of stacking faults luminescence in GaN/Si nanowires-Reference-Cited by-同舟云学术

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Dynamics of stacking faults luminescence in GaN/Si nanowires

Published:2014-11 Issue: Volume:155 Page:293-297
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Korona K.P.,Reszka A.,Sobanska M.,Perkowska P.S.,Wysmołek A.,Klosek K.,Zytkiewicz Z.R.

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference26 articles.

1. Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN

2. Energetics and electronic structure of stacking faults in AlN, GaN, and InN

3. Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

4. Properties of GaN Nanowires Grown by Molecular Beam Epitaxy

5. Sub-meV linewidth of excitonic luminescence in single GaN nanowires: Direct evidence for surface excitons

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1. GaN and AlGaN/AlN Nanowire Ensembles for Ultraviolet Photodetectors: Effects of Planarization with Hydrogen Silsesquioxane and Nanowire Architecture;ACS Applied Nano Materials;2023-07-13

2. First-principles investigation of polytypic defects in InP;Scientific Reports;2022-11-16

3. Enhancement of AlxGa1-xN nanowire array photocathode with heterojunction Al composition assisted by external electric field;Journal of Luminescence;2021-07

4. Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates;Journal of Physics: Conference Series;2021-03-01

5. Influence of Growth Polarity Switching on the Optical and Electrical Properties of GaN/AlGaN Nanowire LEDs;Electronics;2020-12-29

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