Temperature-dependent carrier dynamics of InP/InGaP quantum structures grown at various growth temperatures using migration-enhanced epitaxy-Reference-Cited by-同舟云学术

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Temperature-dependent carrier dynamics of InP/InGaP quantum structures grown at various growth temperatures using migration-enhanced epitaxy

Published:2020-07 Issue: Volume:223 Page:117214
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Cho Il-Wook,Ryu Mee-Yi,Song Jin Dong

Funder

National Research Foundation of Korea

Ministry of Education, Science and Technology

Kangwon National University

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference17 articles.

1. Inhibitory effects of visible 650-nm and infrared 808-nm laser irradiation on somatosensory and compound muscle action potentials in rat sciatic nerve: implications for laser-induced analgesia

2. High-gain optical waveguide amplifier based on proton beam writing of Nd:YAG crystal

3. Room-temperature, ground-state lasing for red-emitting vertically aligned InAlAs/AlGaAs quantum dots grown on a GaAs(100) substrate

4. Feasibility study for Al-free 808 nm lasers with asymmetric barriers suppressing waveguide recombination

5. High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy;Materials;2024-02-09

2. High Uniformity 6-Inch InGaP Epitaxial Growth;Crystals;2023-07-27

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