Optical investigation of the emission lines for Eu3+ and Tb3+ ions in the GaN powder host
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics
Reference32 articles.
1. THE PREPARATION AND PROPERTIES OF VAPOR‐DEPOSITED SINGLE‐CRYSTAL‐LINE GaN
2. GaN, AlN, and InN: A review
3. Progress and prospects for GaN and the III–V nitride semiconductors
4. Defects in Eu- and Tb-doped GaN probed using a monoenergetic positron beam
5. The homoepitaxy of GaN by metalorganic vapor phase epitaxy using GaN substrates
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