Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching-Reference-Cited by-同舟云学术

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Luminescence evolution of porous GaN thin films prepared via UV-assisted electrochemical etching

Published:2015-03 Issue: Volume:159 Page:303-311
ISSN:0022-2313
Container-title:Journal of Luminescence
language:en
Short-container-title:Journal of Luminescence

Author:

Cheah S.F.,Lee S.C.,Ng S.S.,Yam F.K.,Abu Hassan H.,Hassan Z.

Funder

Ministry of Higher Education of Malaysia Fundamental Research Grant Scheme

Ministry of Higher Education of Malaysia

Publisher

Elsevier BV

Subject

Condensed Matter Physics,Biochemistry,General Chemistry,Atomic and Molecular Physics, and Optics,Biophysics

Reference34 articles.

1. In-plane bandgap control in porous GaN through electroless wet chemical etching

2. Influence of Rapid Thermal Annealing on the Luminescence Properties of Nanoporous GaN Films

3. Aligned Mesopore Arrays in GaN by Anodic Etching and Photoelectrochemical Surface Etching

4. An electrochemical study of photoetching of heteroepitaxial GaN: kinetics and morphology

5. Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism

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1. Near-field radiative heat transfer between nanoporous GaN films;Chinese Physics B;2023-11-04

2. The development and applications of nanoporous gallium nitride in optoelectronics: a review;Semiconductor Science and Technology;2023-05-25

3. Review—Progress in Electrochemical Etching of Third-Generation Semiconductors;ECS Journal of Solid State Science and Technology;2023-04-01

4. Antireflective GaN Nanoridge Texturing by Metal-Assisted Chemical Etching via a Thermally Dewetted Pt Catalyst Network for Highly Responsive Ultraviolet Photodiodes;ACS Applied Materials & Interfaces;2023-03-07

5. Study on material removal mechanisms in electrochemical etching-enhanced polishing of GaN;Journal of Manufacturing Processes;2022-01

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