Experimental investigation on the ultrasonically assisted single-sided lapping of monocrystalline SiC substrate-Reference-Cited by-同舟云学术

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Experimental investigation on the ultrasonically assisted single-sided lapping of monocrystalline SiC substrate

Published:2019-08 Issue: Volume:44 Page:299-308
ISSN:1526-6125
Container-title:Journal of Manufacturing Processes
language:en
Short-container-title:Journal of Manufacturing Processes

Author:

Hu Yong,Shi Dong,Hu Ye,Zhao Hongwei,Sun Xindong,Wang Maosen

Funder

Key Scientific and Technological Project (Hi-Tech) in Jilin province of China

Publisher

Elsevier BV

Subject

Industrial and Manufacturing Engineering,Management Science and Operations Research,Strategy and Management

Reference20 articles.

1. A case for 2-body material removal in prime LED sapphire substrate lapping and polishing;Gagliardi;J Manuf Process,2013

2. Removal mechanism of sapphire substrates (0001, 1120 and 1010) in mechanical planarization machining;Luo;Ceram Int,2017

3. Machining processes for sapphire wafers: a literature review;Li;P I Mech Eng B-J. Eng,2011

4. Machining processes for sapphire wafers: a literature review;Li;P I Mech Eng B-J Eng,2011

5. Effect of ultrasonic vibration on the single discharge of electrochemical discharge machining;Elhami;Mater Manuf Process,2018

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2. A wireless-feeding capacitive electrode mechanism for achieving massive nanosecond parallel-discharge EDM for large-size wafer flattening;Journal of Manufacturing Processes;2024-09

3. Surface characteristics and material removal mechanisms during nanogrinding on C-face and Si-face of 4H-SiC crystals: Experimental and molecular dynamics insights;Applied Surface Science;2024-08

4. Molecular simulation of ultrasonic assisted diamond grit scratching 4H-SiC single-crystal;Tribology International;2024-04

5. Optimisation of free-abrasive assisted lapping process with vitrified bonded diamond plates for sapphire substrates;Precision Engineering;2024-03

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