Molecular simulation of ultrasonic assisted diamond grit scratching 4H-SiC single-crystal
Author:
Funder
China Postdoctoral Science Foundation
Publisher
Elsevier BV
Reference69 articles.
1. ReaxFF reactive molecular dynamics study of orientation dependence of initial silicon carbide oxidation;Simonka;J Phys Chem A,2017
2. Oxidation of silicon carbide by O2 and H2O: a reaxff reactive molecular dynamics study, part I;Newsome;J Phys Chem C,2012
3. Mechanistic difference between Si-face and C-face polishing of 4H–SiC substrates in aqueous and non-aqueous slurries;Shen;Ceram Int,2023
4. Atomic simulation of textured silicon carbide surface ultra-precision polishing;Meng;Ceram Int,2022
5. Chemical reaction on silicon carbide wafer (0001 and 000−1) with water molecules in nanoscale polishing;Tian;Appl Surf Sci,2023
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Microscopic removal mechanism of 4 H-SiC during abrasive scratching in aqueous H2O2 and H2O: Insights from ReaxFF molecular dynamics;Tribology International;2024-12
2. Scratching properties of 4H–SiC single crystal after oxidation under different conditions;Wear;2024-11
3. Molecular dynamics simulations in semiconductor material processing: A comprehensive review;Measurement;2024-09
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3