Oxidation of Silicon Carbide by O2 and H2O: A ReaxFF Reactive Molecular Dynamics Study, Part I-Reference-Cited by-同舟云学术

Oxidation of Silicon Carbide by O2 and H2O: A ReaxFF Reactive Molecular Dynamics Study, Part I

Published:2012-07-19 Issue:30 Volume:116 Page:16111-16121
ISSN:1932-7447
Container-title:The Journal of Physical Chemistry C
language:en
Short-container-title:J. Phys. Chem. C

Author:

Newsome David A.¹,Sengupta Debasis¹,Foroutan Hosein²,Russo Michael F.²,van Duin Adri C. T.²

Affiliation:

1. CFD Research Corporation, 215 Wynn Dr., Huntsville, Alabama 35805, United States

2. Department of Mechanical and Nuclear Engineering, Pennsylvania State University, 136 Research East Building, Bigler Road, University Park, Pennsylvania 16802, United States

Publisher

American Chemical Society (ACS)

Subject

Surfaces, Coatings and Films,Physical and Theoretical Chemistry,General Energy,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/jp306391p

Reference56 articles.

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3. Opila, E. J. and Robinson, R. C.Can be downloaded from NASA technical report server,Document ID 20010079793,http://ntrs.nasa.gov/search.jsp, 1999.

4. Opila, E. J. and Serra, J. L., Can be downloaded from NASA technical report server,Document ID 20080012610,http://ntrs.nasa.gov/search.jsp, 2007.

5. Jacobson, N. S. and Rapp, R. A.NASA Technical Memorandum 106793, 1995.

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