Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology-Reference-Cited by-同舟云学术

Deep insights on new embedded resistance and gated diode on thin film silicon BIMOS device with and without external polysilicon resistance for advanced ESD protection in FD-SOI technology

Published:2021-11 Issue: Volume:185 Page:108092
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Galy Ph.,Anghel L.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference8 articles.

1. A strategy for characterization and evaluation of ESD robustness of CMOS semiconductor technologies;Voldman;Microelectron Reliab,2001

2. Voldman S. Electrostatic discharge protection and latch up design and methodologies for ASIC development. (2018), DOI: 10.5772/intechopen.81033.

3. Impact and damage on deep-micron CMOS technology induced by substrate current due to ESD stress;Galy;Microelectron Reliab,2009

4. The ideal vertical BIMOS transistor: analytical model, simulation and experimental results of the collector current;Galy;Int J Electron,1996

5. Ph. Galy, Jimenez J, Bourgeat J, Dray A, Troussier G, Heitz B, Guitard B, Marin-cudraz D, Beckrich-Ros H, BIMOS transistor and its application in ESD protection in advanced CMOS technology. In: 2012 IEEE International Conference on IC Design & Technology (ICICDT), Austin, TX, USA, 2012.

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. RC-diode ESD protection design for high-frequency applications;Solid-State Electronics;2022-02