Impact of gate current on the operational transconductance amplifier designed with nanowire TFETs

Author:

de M. Nogueira Alexandro,G.D. Agopian Paula,Simoen Eddy,Rooyackers Rita,Claeys Cor,Collaert Nadine,Martino Joao A.

Funder

Conselho Nacional de Desenvolvimento Científico e Tecnológico

Fundação de Amparo à Pesquisa do Estado de São Paulo

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Tunnel field-effect transistors as energy-efficient electronic switches;Ionescu;Nature,2011

2. Experimental comparison between trigate p-TFET and p-FinFET analog performance as a function of Temperature;Der Agopian;IEEE Trans Electron Devices,2013

3. A. R. Rofougaran, B. Furman, and A. A. Abidi, “Accurate analog modeling of short channel FETs based on table lookup”, in 1988, IEEE International Symposium on Circuits and Systems, Espoo, Finland, 1988, p. 413–416.

4. Universal analytic model for tunnel FET circuit simulation;Lu;Solid-State Electron,2015

5. Implementation of TFET SPICE model for ultra-low power circuit analysis;Tanaka;IEEE J. Electron Devices Soc.,2016

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