Author:
Bernát J.,Wolter M.,Javorka P.,Fox A.,Marso M.,Kordos̆ P.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Ando Y, Okamoto Y, Hataya K, Nakayama T, Miyamoto H, Inoue T, et al. 12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET. IEDM Technical digest, 2003; paper 23.1
2. Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress;Mittereder;Appl. Phys. Lett,2003
3. Effects of SiN passivation and high-electric field on AlGaN–GaN HFET degradation;Kim;IEEE Electron Dev. Lett,2003
4. Electrical bias stress related degradation of AlGaN/GaN HEMTs;Koley;Electron Lett,2003
5. Impact of Si doping on RF dispersion in unpassivated GaN/AlGaN/GaN HEMTs grown by plasma-assisted MBE;Mitrofanov;Appl. Phys. Lett,2003
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