Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Current collapse induced in AlGaN/GaN high-electron-mobility transistors by bias stress

Published:2003-08-25 Issue:8 Volume:83 Page:1650-1652
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Mittereder J. A.,Binari S. C.,Klein P. B.,Roussos J. A.,Katzer D. S.,Storm D. F.,Koleske D. D.,Wickenden A. E.,Henry R. L.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1604472

Reference10 articles.

1. Trapping effects in GaN and SiC microwave FETs

2. MBE growth of AlGaN∕GaN HEMTs with high power density

3. The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys

4. Observation of deep traps responsible for current collapse in GaN metal–semiconductor field-effect transistors

5. Hydrogen passivation of deep levels in n–GaN

Cited by 66 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Numerical simulation analysis of carbon defects in the buffer on vertical leakage and breakdown of GaN on silicon epitaxial layers;Scientific Reports;2023-09-08

2. Suppression of hot electron effect in AlGaN/GaN HEMT with multi-grooves barrier-etched structure;Materials Research Express;2023-05-01

3. Study of AlGaN/GaN High‐Electron‐Mobility Transistors on Si Substrate with Thick Copper‐Metallized Interconnects for Ka‐Band Applications;physica status solidi (a);2023-02-15

4. An insight to current collapse in GaN HEMT and suppressing techniques;Engineering Research Express;2023-01-17

5. Influence of AlN Spacer Layer on SiN-Passivated AlGaN/GaN HEMT;Lecture Notes in Electrical Engineering;2023

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3