MBE growth of AlGaN∕GaN HEMTs with high power density-Reference-Cited by-同舟云学术

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MBE growth of AlGaN∕GaN HEMTs with high power density

Published:2002 Issue:25 Volume:38 Page:1740
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Katzer D.S.,Binari S.C.,Storm D.F.,Roussos J.A.,Shanabrook B.V.,Glaser E.R.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20021102?crawler=true&mimetype=application/pdf

Reference5 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. GaN HFETs on SiC Substrates Grown by Nitrogen Plasma MBE

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1. GaN HEMT for High-performance Applications: A Revolutionary Technology;Recent Advances in Electrical & Electronic Engineering (Formerly Recent Patents on Electrical & Electronic Engineering);2023-09-14

2. Microstructure of Ti/Al/Ni/Au ohmic contacts for N-polar GaN/AlGaN high electron mobility transistor devices;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2014-01

3. Comparison of microstructure of N-polar GaN/AlGaN/GaN heterostructures grown on different substrates;Journal of Crystal Growth;2012-10

4. Ultra-high vacuum deposition and characterization of silicon nitride thin films;J VAC SCI TECHNOL B;2012

5. Strain modification of AlGaN layers using swift heavy ions;Radiation Effects and Defects in Solids;2011-11

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