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Strain modification of AlGaN layers using swift heavy ions

  • Published:2011-11 Issue:11 Volume:166 Page:843-850
  • ISSN:1042-0150
  • Container-title:Radiation Effects and Defects in Solids
  • language:en
  • Short-container-title:Radiation Effects and Defects in Solids

Author:

Sathish N.,Pathak A. P.,Dhamodaran S.,Sundaravel B.,Nair K. G.M.,Khan S. A.,Avasthi D. K.,Bazzan M.,Trave E.,Mazzoldi P.

Publisher

Informa UK Limited

Subject

Condensed Matter Physics,General Materials Science,Nuclear and High Energy Physics,Radiation

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Defect-induced strain-assisted surface electronic response of layered materials;Bulletin of Materials Science;2021-09-23

2. Role of electronic excitations and nuclear collisions for color center creation in Al Ga1−N semiconductors;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2016-07

3. Dislocation density and tetragonal distortion of a GaN epilayer on Si (111): A comparative RBS/C and TEM study;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2014-07
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