High reliability GaN-based light-emitting diodes with photo-enhanced wet etching
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes
3. Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substrates
4. Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor
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