Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor-Reference-Cited by-同舟云学术

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Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor

Published:2001-03-01 Issue:Part 2, No. 3A Volume:40 Page:L198-L200
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Lee Jae-Seung,Kim Jong-Wook,Jung Doo-Chan,Kim Chang-Seok,Lee Won-Sang,Lee Jae-Hak,Shin Jin-Ho,Shin Moo-Whan,Oh Jae-Eung,Lee Jung-Hee

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Implementation of Recessed Gate Normally off GaN Metal–Insulator–Semiconductor High Electron Mobility Transistors by Electrodeless Photoelectrochemical Etching;ACS Applied Electronic Materials;2022-02-10

2. Oxygen-based digital etching of AlGaN/GaN structures with AlN as etch-stop layers;Journal of Vacuum Science & Technology A;2019-12

3. Characterization of 0.18-μm gate length AlGaN/GaN HEMTs on SiC fabricated using two-step gate recessing;Journal of the Korean Physical Society;2017-09

4. Fabrication of normally-off AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors by photo-electrochemical gate recess etching in ionic liquid;Applied Physics Express;2016-07-25

5. Perspectives in nanoscale plasma etching: what are the ultimate limits?;Journal of Physics D: Applied Physics;2011-04-14

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