Analysis of fluorine effects on charge-trap flash memory of W/TiN/Al2O3/Si3N4/SiO2/poly-Si gate stack

Author:

Lee Tae Yoon,Lee Seung Hwan,Son Jun Woo,Lee Sang Jae,Bong Jae Hoon,Shin Eui Joong,Kim Sung Ho,Hwang Wan Sik,Moon Jung Min,Choi Yang Kyu,Cho Byung Jin

Funder

SK Hynix Inc

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Evolution of NAND flash memory: from 2D to 3D as a storage market leader;Kim,2017

2. Bit cost scalable technology with punch and plug process for ultra high density flash memory;Tanaka,2007

3. Vertical cell array using TCAT (Terabit Cell Array Transistor) technology for ultra high density NAND flash memory;Jang,2009

4. Challenges in 3D memory manufacturing and process integration;Chandrasekaran,2013

5. Vapor deposition of tungsten by hydrogen reduction of tungsten hexafluoride;Berkeley;J Electrochem Soc,1967

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