Long‐Term Retention of Low‐Power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Trilayered Dielectric Containing Charge Trapping Functionality-Reference-Cited by-同舟云学术

Long‐Term Retention of Low‐Power, Nonvolatile Organic Transistor Memory Based on Ultrathin, Trilayered Dielectric Containing Charge Trapping Functionality

Published:2020-09-06 Issue:43 Volume:30 Page:2004665
ISSN:1616-301X
Container-title:Advanced Functional Materials
language:en
Short-container-title:Adv. Funct. Mater.

Author:

Lee Changhyeon¹,Pak Kwanyong¹,Choi Junhwan¹,Kim Min Ju²,Cho Byung Jin²,Im Sung Gap¹^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering Korea Advanced Institute of Science and Technology 291 Daehak‐ro, Yuseong‐gu Daejeon 34141 Republic of Korea

2. Department of Electrical Engineering Korea Advanced of Institute of Science and Technology Daejeon 34141 Republic of Korea

Funder

KAIST Wearable Platform Material Technology Center

National Research Foundation of Korea

Ministry of Science, ICT and Future Planning

Ministry of Education, Science and Technology

Publisher

Wiley

Subject

Electrochemistry,Condensed Matter Physics,Biomaterials,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/adfm.202004665