Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface-Reference-Cited by-同舟云学术

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Lowering the effective work function via oxygen vacancy formation on the GeO2/Ge interface

Published:2017-04 Issue: Volume:130 Page:57-62
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Lee Tae In,Seo Yujin,Moon Jungmin,Ahn Hyun Jun,Yu Hyun-Young,Hwang Wan Sik,Cho Byung Jin

Funder

Industrial Strategic Technology Development Program

Ministry of Trade, Industry & Energy (MI, Korea).

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference21 articles.

1. Nanometre-scale electronics with III-V compound semiconductors;Del Alamo;Nature,2011

2. Academic and industry research progress in germanium nanodevices;Pillarisetty;Nature,2011

3. High-performance ultrathin body c-SiGe channel FDSOI pMOSFETs featuring SiGe source and drain: Vth tuning, variability, access resistance, and mobility issues;Villalon;IEEE Transact Electron Dev,2013

4. Gate stack technology for nanoscale devices;Lee;Mater Today,2006

5. III-V and Ge channel MOS device technologies in nano CMOS era;Takagi;Jpn J Appl Phys,2015

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1. Effects of 10 MeV Al4+ ions irradiation on fluorine-doped tin oxide substrates for photovoltaic device applications;Journal of Physics D: Applied Physics;2021-05-04

2. Well-aligned periodic germanium nanoisland arrays with large areas and improved field emission performance induced by femtosecond laser;Applied Surface Science;2020-04

3. Reaction and Energy Levels at Oxide–Oxide Heterojunction Interfaces;Advanced Materials Interfaces;2019-09-18

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