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Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area

  • Published:2017-03 Issue: Volume:129 Page:114-119
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Wang Chong,Zhao Meng-Di,He Yun-Long,Zheng Xue-Feng,Wei Xiao-Xiao,Mao Wei,Ma Xiao-Hua,Zhang Jin-Cheng,Hao Yue

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference14 articles.

1. InAlN/AlN/GaN HEMTs with regrown ohmic contacts and fT of 370GHz;Yue;IEEE Electr Dev Lett,2012

2. Self-aligned-gate GaN-HEMTs with heavily-doped n+ -GaN ohmic contacts to 2DEG;Shinohara;Int. Electr. Dev. Meeting.,2012

3. AlGaN/GaN HEMT With 300-GHz;Chung;IEEE Electron Dev Lett,2010

4. Investigation of surface treatment schemes on n-type GaN and Al0.20Ga0.80N;Selvanathan;J Vac Sci Technol, B,2005

5. Gothard G, German F. CHAPTER 7 - Transmission line modeling method. Time domain electromagnetic; 1999. p. 237–77.

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