Optimized Contact Resistance and Device Performance of AlGaN/GaN HEMTs by sub-10 nm Nano-Hole Patterns

Abstract

Sub-10 nm scale nano-hole patterns were designed to reduce contact resistance and improve the electrical characteristics of HEMTs by using electron beam lithography. AlGaN/GaN HEMTs with the contact resistance decreased from 1.82 Ω-mm to 0.47 Ω-mm were achieved, and the maximum drain current was enhanced from 319 mA/mm to 496 mA/mm.