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Extraction method for parasitic capacitances and inductances of HEMT models

  • Published:2017-03 Issue: Volume:129 Page:108-113
  • ISSN:0038-1101
  • Container-title:Solid-State Electronics
  • language:en
  • Short-container-title:Solid-State Electronics

Author:

Zhang HengShuang,Ma PeiJun,Lu Yang,Zhao BoChao,Zheng JiaXin,Ma XiaoHua,Hao Yue

Funder

National Natural Science Foundation of China

National High-tech R&D Program

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Aging Small-Signal Equivalent Circuit Modeling Method for InP HBT;IEEE Transactions on Device and Materials Reliability;2023-12

2. New Methodology for Parasitic Resistance Extraction and Capacitance Correction in RF AlGaN/GaN High Electron Mobility Transistors;Electronics;2023-07-11

3. A fast small signal modeling method for GaN HEMTs;Solid-State Electronics;2021-01

4. Device Technologies and Circuits for 5G and 6G;Lecture Notes in Electrical Engineering;2021

5. A combined technique for amplifier oriented small‐signal noise model extraction;International Journal of RF and Microwave Computer-Aided Engineering;2020-05-16
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