Effect of channel dopant uniformity on MOSFET threshold voltage variability-Reference-Cited by-同舟云学术

Effect of channel dopant uniformity on MOSFET threshold voltage variability

Published:2012-03 Issue: Volume:69 Page:62-66
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Terada Kazuo,Sanai Kazuhiko,Tsuji Katsuhiro,Tsunomura Takaaki,Nishida Akio,Mogami Tohru

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Understanding random threshold voltage fluctuation by comparing multiple fabs and technologies;Takeuchi;IEEE IEDM, Tech Dig,2007

2. Tsunomura T et al. Analyses of 5-sigma Vth fluctuation in 65-nm MOSFETs using takeuchi plot. In: 2008 Symp on VLSI technology, dig tech papers; 2008. p. 156–7.

3. Tsunomura T et al. Analysis of extra Vth variability sources in NMOS using Takeuchi plot. In: 2009 Symp on VLSI technology dig tech papers; 2009. p. 110–1.

4. Tanaka T et.al. Vth fluctuation induced by statistical variation of pocket dopant profile. In: IEEE IEDM, dig tech papers; 2000. p. 271–4.

5. Takahashi K et al. The effect of halo on threshold voltage variability. In: Chugoku-branch joint convention of IEICE Japan; 2008. p. 3–11.

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1. Low-hole concentration polycrystalline germanium by CO2 laser annealing for the fabrication of an enhancement-mode nMOSFET;Applied Physics Express;2018-09-26

2. Study on Threshold Voltage Variation Evaluated by Charge-Based Capacitance Measurement;IEICE Transactions on Electronics;2016

3. Effect of Channel Dopant Non-uniformity on Transconductance Variability;Japanese Journal of Applied Physics;2012-09-01

4. Effect of Channel Dopant Non-uniformity on Transconductance Variability;Japanese Journal of Applied Physics;2012-08-20