Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies-Reference-Cited by-同舟云学术

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Comparison of sub-micron Si:SiGe heterojunction nFETs to Si nMOSFET in present-day technologies

Published:2004-08 Issue:8 Volume:48 Page:1401-1406
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Fobelets K.,Jeamsaksiri W.,Papavasilliou C.,Vilches T.,Gaspari V.,Velazquez-Perez J.E.,Michelakis K.,Hackbarth T.,König U.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference12 articles.

1. Sub-100 nm gate technologies for Si/SiGe-buried-channel RF devices;Zeuner;Jpn. J. Appl. Phys.,2003

2. High performance 100 nm T-gate strained Si/Si0.6Ge0.4 n-MODFET;Aniel;Solid-State Electron.,2003

3. Fabrication and analysis of deep submicron strained-Si N-MOSFET's;Rim;IEEE Trans. Electron. Dev.,2000

4. High-performance nMOSFETs using a novel strained Si/SiGe CMOS architecture;Olsen;IEEE Tans. Electron. Dev.,2003

5. Gate-source–drain architecture impact on DC and RF performance of sub-100 nm elevated source/drain NMOS transistors;Jeamsaksiri;IEEE Trans. Electron. Dev.,2003

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of the Front and Back Illumination on Sub-Terahertz Detection Using n-Channel Strained-Silicon MODFETs;Applied Sciences;2020-08-28

2. Room-Temperature Terahertz Detection and Imaging by Using Strained-Silicon MODFETs;Design, Simulation and Construction of Field Effect Transistors;2018-07-18

3. Sub-THz Imaging Using Non-Resonant HEMT Detectors;Sensors;2018-02-10

4. TCAD study of sub-THz photovoltaic response of strained-Si MODFET;Journal of Physics: Conference Series;2015-10-13

5. Optimization of THz response of strained-Si MODFETs;physica status solidi (c);2015-08-31

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