Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current-Reference-Cited by-同舟云学术

Analytical model for quantization on strained and unstrained bulk nMOSFET and its impact on quasi-ballistic current

Published:2006-01 Issue:1 Volume:50 Page:69-77
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Ferrier M.,Clerc R.,Ghibaudo G.,Boeuf F.,Skotnicki T.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference19 articles.

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5. Essential physics of carrier transport in nanoscale MOSFETS;Lundstrom;IEEE Trans Electron Dev,2002

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