Use of WKB approximation for analytical boundary conditions in numerical solution of Schrödinger equation: application to semiconductor-high-k dielectric interfaces-Reference-Cited by-同舟云学术

Use of WKB approximation for analytical boundary conditions in numerical solution of Schrödinger equation: application to semiconductor-high-k dielectric interfaces

Published:2015-07-07 Issue:3 Volume:29 Page:392-406
ISSN:0894-3370
Container-title:International Journal of Numerical Modelling: Electronic Networks, Devices and Fields
language:en
Short-container-title:Int. J. Numer. Model.

Author:

Bayoumi Amr M.¹^ORCID

Affiliation:

1. Electronics and Communications Department, College of Engineering; Arab Academy for Science and Technology; Ahmed Ismail St. Heliopolis Cairo Egypt

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modeling and Simulation

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/jnm.2084/fullpdf

Reference23 articles.

1. Numerical methods for the eigenvalue determination of second-order ordinary differential equations;Ishikawa;J Comput Appl Math,2007

2. Bayoumi AM D2. Simplified analytical iterations for electron wavefunction using self-consistent solution for nm MOS gate stacks th 2012 10.1109/NRSC.2012.6208567

3. Numerical solution of the stationary state Schrodinger equation using transparent boundary conditions;Moyer;Comput in Sci & Eng,2006

4. International Technology Roadmap for Semiconductors (ITRS) 2013 http://www.itrs.net

5. Ultrathin EOT high-κ/metal gate devices for future technologies: challenges, achievements and perspectives (invited);Ragnarsson;Microelectronic Eng,2011

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