A physics based analytical model for buried p-layer non-self aligned SiC MESFET for the saturation region

Author:

Aggarwal Sandeep Kr.,Gupta Ritesh,Haldar Subhasis,Gupta Mridula,Gupta R.S.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference16 articles.

1. Trew RJ, Shin MW. Wide band gap semiconductor MESFETs for high temperature applications. In: Integrated non-linear microwave and millimeter wave circuits, Third international workshop, 1994, pp. 109–123.

2. RF performance of SiC MESFET’s on high resistivity substrates;Sriram;IEEE EDL,1994

3. 4H-SiC MESFET’s with 42GHz Fmax;Sriram;IEEE EDL,1996

4. Electron mobility models for 4H, 6H, and 3C SiC [MESFETs];Schwierz;IEEE ED,2001

5. Process in the use of 4H-SiC semi-insulating wafers for microwave power MESFET’s;Noblanc;Mater Sci Eng B,1999

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2. A theoretical study on the linearity of the I d -T curve of a SiC MESFET for sensor application;Superlattices and Microstructures;2017-01

3. Investigations of Surface State and 1/frNoise Characteristics of InGaAs Metal–Semiconductor Field-Effect Transistors;Japanese Journal of Applied Physics;2009-07-21

4. Improved empirical DC I–V model for 4H-SiC MESFETs;Science in China Series F: Information Sciences;2008-06-18

5. Improved Characteristics of 4H-SiC MESFET with Multi-recessed Drift Region;2007 International Workshop on Electron Devices and Semiconductor Technology (EDST);2007-06

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