Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs-Reference-Cited by-同舟云学术

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Progress in the use of 4H-SiC semi-insulating wafers for microwave power MESFETs

Published:1999-07 Issue: Volume:61-62 Page:339-344
ISSN:0921-5107
Container-title:Materials Science and Engineering: B
language:en
Short-container-title:Materials Science and Engineering: B

Author:

Noblanc O,Arnodo C,Dua C,Chartier E,Brylinski C

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference5 articles.

1. Proceedings of ICSCRM 95 Conference (Kyoto);Brandt,1995

2. IEEE MTT-S Digest;Allen,1997

3. Proceedings of DRC, in press;Sadler,1998

4. Proceedings of ICSCRM 97 (Stockholm);Noblanc,1997

5. Microwave power MESFET on 4H-SiC

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1. Growth of vanadium doped semi-insulating 4H-SiC epilayer with ultrahigh-resistivity;Journal of Applied Physics;2022-06-28

2. Influence of Source/Drain Residual Implant Lattice Damage Traps on Silicon Carbide Metal Semiconductor Field-Effect Transistor Drain I-V Characteristics;Physics Procedia;2012

3. Numerical Simulation of 4H-SiC Metal Semiconductor Field Transistors;Chinese Physics Letters;2011-07

4. Conductance deep-level transient spectroscopy study of 1μm gate length 4H-SiC MESFETs;Solid-State Electronics;2006-02

5. Effects of hydrogen on the properties of SiC crystals grown by physical vapor transport: Thermodynamic considerations and experimental results;Journal of Crystal Growth;2006-01

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