Author:
De Michielis Marco,Esseni David,Palestri Pierpaolo,Selmi Luca
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference11 articles.
1. Experimental study on superior mobility in [110]-oriented UTB SOI pMOSFETs;Tsutsui;IEEE Elect Dev Lett,2005
2. [110]-surface strained-SOI CMOS devices;Mizuno;IEEE Trans Elect Dev,2005
3. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFETs;Oberhuber;Phys Rev B,1998
4. Six-band k·p calculation of the hole mobility in silicon inversion layers: dependence on surface orientation, strain, and silicon thickness;Fischetti;J Appl Phys,2003
5. Lucci L, Palestri P, Esseni D, Selmi L. Multi-subband Monte Carlo modeling of nano-MOSFETs with strong vertical quantization and electron gas degeneration. In: IEEE IEDM technical digest. 2005. p. 631–4.
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