Efficient 2D k-Space Discretization and Non-Linear Interpolation Schemes
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Publisher
Springer Vienna
Link
http://link.springer.com/content/pdf/10.1007/978-3-7091-0778-2_8
Reference10 articles.
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3. Fischetti, M.V., Ren, Z., Solomon, P.M., Yang, M., Rim, K.: Six-band k ⋅p calculation of the hole mobility in silicon inversion layers: Dependence on surface orientation, strain, and silicon thickness. J. Appl. Phys. 94, 1079–1095 (2003)
4. Pham, A.T., Jungemann, C., Meinerzhagen, B.: Physics-based modeling of hole inversion layer mobility in strained SiGe on insulator. IEEE Trans. Electron Dev. 54(9), 2174–2182 (2007)
5. Fritsch, F.N., Carlson, R.E.: Monotone piecewise cubic interpolation. SIAM J. Num. Anal. 17(2), 238–246 (1980)
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