Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process-Reference-Cited by-同舟云学术

Compensation of oxygen defects in La-silicate gate dielectrics for improving effective mobility in high-k/metal gate MOSFET using oxygen annealing process

Published:2012-02 Issue: Volume:68 Page:68-72
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Kawanago T.,Suzuki T.,Lee Y.,Kakushima K.,Ahmet P.,Tsutsui K.,Nishiyama A.,Sugii N.,Natori K.,Hattori T.,Iwai H.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference24 articles.

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3. Henson K, Bu H, Na MH, Liang Y, Kwon U, Krishnan S, et al. In: Tech Dig – Int Electron Devices Meet; 2008. p. 645.

4. Kuhn KJ. In: Tech Dig – Int Electron Devices Meet; 2007. p. 471.

5. Remote-charge-scattering limited mobility in field-effect transistors with SiO2 and Al2O3∕SiO2 gate stacks

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