Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO 2 /GeO 2 gate stack

Author:

Nagatomi Yuta,Tateyama Tomoki,Tanaka Shintaro,Wen Wei-Chen,Sakaguchi Taisei,Yamamoto Keisuke,Zhao Liwei,Wang Dong,Nakashima Hiroshi

Funder

(JSPS) KAKENHI

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference34 articles.

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2. High-mobility Ge p- and n-MOSFETs With 0.7-nm EOT using HfO2/Al2O3/GeOx/Ge gate stacks fabricated by plasma postoxidation;Zhang;IEEE Trans. Electron Devices,2013

3. Germanium-Based Technologies: From Materials to Devices;Claeys,2007

4. MOS interface and channel engineering for high-mobility Ge/III-V CMOS;Takagi;Tech. Dig. – Int. Electron Devices Meet.,2012

5. Overview and status of metal S/D Schottky-barrier MOSFET technology;Larson;IEEE Trans. Electron Devices,2006

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