Optical properties studies in InGaN/GaN multiple-quantum well-Reference-Cited by-同舟云学术

Optical properties studies in InGaN/GaN multiple-quantum well

Published:2009-03 Issue:3 Volume:53 Page:336-340
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Zhu Lihong,Liu Baolin

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference15 articles.

1. Shuji Nakamura.Recent Developments in InGaN-Based Blue LEDs and LDs. Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan, 1998.

2. Characteristics of InGaN-based UV/blue/green/amber/red light-emitting diodes;Takashi;Jpn J Appl Phys,1999

3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes

4. Current and Temperature Dependences of Electroluminescence of InGaN-Based UV/Blue/Green Light-Emitting Diodes

5. Temperature dependence of electroluminescence intensity of green and blue InGaN single-quantum-well light-emitting diodes

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