Static impedance behavior of programmable metallization cells

Author:

Rajabi S.,Saremi M.,Barnaby H.J.,Edwards A.,Kozicki M.N.,Mitkova M.,Mahalanabis D.,Gonzalez-Velo Y.,Mahmud A.

Funder

Defense Threat Reduction Agency

NSF

Air Force Research Laboratory

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference44 articles.

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3. Analog memristors based on thickening/thinning of Ag nanofilaments in amorphous manganite thin films;Liu;ACS Appl Mater Interf,2013

4. Nanoscale memory elements based on solid state electrolytes;Kozicki;IEEE Trans Nanotechnol,2005

5. Cation-based resistance change memory;Valov;J Phys D: Appl Phys,2013

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