In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature-Reference-Cited by-同舟云学术

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In depth static and low-frequency noise characterization of n-channel FinFETs on SOI substrates at cryogenic temperature

Published:2014-08 Issue: Volume:98 Page:12-19
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Achour H.,Cretu B.,Routoure J.-M.,Carin R.,Talmat R.,Benfdila A.,Simoen E.,Claeys C.

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference39 articles.

1. A survey of MOS devices physics for low temperature electronics;Ghibaudo;Microelectron Eng,1992

2. Brief review of the MOS device physics for low temperature electronics;Balestra;Solid State Electron,1994

3. Freeze-out effects on NMOS transistors characteristics at 4.2K;Simoen;IEEE Trans Electron Dev,1989

4. Assessment of interface state density in silicon metal oxide semiconductor transistors at room, liquid nitrogen, and liquid helium temperatures;Hafez;J Appl Phys,1990

5. Impact of LDD structures on the operation of silicon MOSFETs at low temperature;Hafez;Solid State Electron,1995

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1. Accounting for Current Degradation Effects in the Compact Noise Modeling of Nano-scale MOSFETs;2022 11th International Conference on Modern Circuits and Systems Technologies (MOCAST);2022-06-08

2. Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETs;Nanomaterials;2021-01-26

3. Influence of series resistance on the experimental extraction of FinFET noise parameters;2020 IEEE 33rd International Conference on Microelectronic Test Structures (ICMTS);2020-05

4. Comparison of Total-Ionizing-Dose Effects in Bulk and SOI FinFETs at 90 and 295 K;IEEE Transactions on Nuclear Science;2019-06

5. Assessment of DC and low-frequency noise performances of triple-gate FinFETs at cryogenic temperatures;Semiconductor Science and Technology;2016-11-11

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